Multi-step pulling of GaInSb bulk crystal from ternary solution

Abstract The solute feeding Czochralski method was applied to the growth of GaInSb alloy from Ga–In–Sb ternary solution. At first, an alloy with 0.04 GaSb mole fraction was grown on an InSb(1 1 1)B seed. Using the grown alloy as a seed, an alloy with 0.08 GaSb mole fraction was pulled. By adopting a small step in composition less than 0.05, single-crystal growth was maintained in every step. After four steps, the alloy composition of 0.17 GaSb mole fraction was achieved. Wafers of about 10 mm diameter with etch pit density of (5–6)×10 4  cm −2 can be produced.