A method to improve crystal quality of CZTSSe absorber layer

High crystallinity CZTSSe absorber layer are successfully prepared by spin-coating method on glass substrates and selenization process using Se powder. The influence of the Se powder content in selenization process on the crystal growth, optical, electrical properties, and surface morphology of CZTSSe thin films is investigated. At optimal Se amount of 0.02 g, the p-type CZTSSe film had bandgap energy, hole concentration and resistivity of 1.27 eV, 1.7 × 1019 cm-3 and 0.57 Ω cm respectively which were suitable for photovoltaic application.