Analysis of the photoluminescence spectra of CdxHg1–xte heteroepitaxial structures with potential and quantum wells grown by molecularbeam epitaxy

A theoretical model for description of the band diagram and the photoluminescence spectra of heteroepitaxial structures (HES) based on CdxHg1–xTe (MCT) with potential and quantum wells (QW) grown by molecularbeam epitaxy (MBE) is developed. A special feature of the model is that the model takes into account the dependence of electron affinity on the MCT composition and temperature as well as the dependence of the electron concentration in intrinsic MCT and hole concentration in vacancy-doped MCT. The calculations are made and the results are compared with the experimental photoluminescence spectra of various structures with QW reported in the literature.