Implantation profiles of Li in metals

1986 
Abstract Depth profiles of 50–300 keV 6 Li, implanted into single crystalline Si, Ni, Cu. Ge. Be. polycrystalline Al. Ti. V, Fe, Co, Ni, Zn, Se, Zr, Mo, Ag, Cd, In, Sn, Sb, Te, Ta, W, Pt, Au, Tl, Pb, stainless steel 304 and graphite at room temperature were measured by (n, α) spectrometry, and compared to theoretical predictions (TRIM and PRAL). Good agreement was found in most cases. However, often the profiles were additionally affected by thermal diffusion with (C and probably single crystalline Be) or without trapping (Ge, Zn and probably also In, Sn, Tl and Pb), radiation induced diffusion (Cu, Ni, Pt and Au) and channeling (found especially in Si, Fe and Mo).
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