GaAs‐oxide removal using an electron cyclotron resonance hydrogen plasma

The surface chemistry of GaAs‐oxide removal with an electron cyclotron resonance (ECR) hydrogen plasma has been investigated with x‐ray photoelectron spectroscopy. It is found that As oxide is efficiently removed at room temperature, and heating expedites the removal of Ga oxide. Band bending changes during ECR hydrogen‐plasma oxide reduction are also discussed.