Universality of Short-Channel Effects on Ultrascaled MOSFET Performance

Universality of short-channel effects on saturation current of MOSFETs has been demonstrated. The modulations of carrier injection and transmission rate have been integrated into universal functions. The proposed form has been verified by a large set of quantum transport simulations, where relevant ranges of channel thickness, gate length, and scattering mechanisms are covered. As an application, nonlinear current scaling by channel width is presented for ultrascaled devices.