Ultra-high mobility and solution processed inorganic p-channel thin film transistors based on transition metal halide semiconductor

In contrast to the tremendous advances in n-channel inorganic thin-film transistors (TFTs), the development of p-channel devices with comparable electrical performance to their n-channel counterparts has been delayed, due to the lack of p-type semiconductor materials and device optimization. Because p-channel TFTs are indispensable for numerous electronic applications, such as display backplane and complementary circuits, developing new semiconducting materials and understanding the operating mechanism of the devices should be pursued. In this present work, we successfully demonstrate p-channel inorganic TFTs with high hole mobility above 100 cm2/V∙s (58.7 cm2/V∙s on average), similar to the values of n-channel devices. To boost the device performance, the solution-processed transition metal halide p-type semiconductor is gated by a solid polymer electrolyte. The electrolyte gating could realize electrical double layer formation and 3-dimensional carrier transport channel, and thus substantially increased...