Dry etching of Ga2O3

Abstract This chapter introduces the basics of plasma-based etching of Ga 2 O 3 . It begins with a summary of different etching mechanisms and techniques and then provides a review of the literature on dry etching rates, plasma chemistries, ion-induced damage as measured by electrical, optical, and chemical means. The threshold ion energy for initiation of etching of Ga 2 O 3 is quantified and regimes for achieving high etch rates needed for mesa formation in Ga 2 O 3 -based devices and also low damage, low rate conditions for active layer patterning are identified.