Metalorganic molecular beam epitaxy of III-V compounds using tertiarybutyl-V as group-V sources

Abstract This paper reports metalorganic molecular beam epitaxy of GaAs and InP on GaAs(100), and GaP on Si(100) using TBAs and TBP as group-V sources and TEGa and TMIn as group-III sources. It is found that the growth of GaAs is dominated by thermal decomposition of TEGa, while the growth of GaP and InP is influenced by both the reacting group-III and the phosphorus species. The hole concentration of the GaAs epilayers grown at 300 K decreases from 7.9×10 18 to 3.4×10 18 cm −3 with increasing substrate temperature, presumably due to a decrease in sticking coefficient of alkyls. PL spectra from the epilayers at 4.2 K show dominant emissions due to transition between free electrons and acceptors, which is in agreement with the electrical results.