The Preparation and Characterization of Copper Silicon Alloy Films

In this paper, the fabrication,physical and electrochemical properties of copper silicon alloy film were systematically studied and the optimized preparation conditions were obtained.When KrF excimer laser (λ=248 nm) repetition rate is 10Hz, laser energy is 260mJ,vacuum is 10-5Pa, target and substrate revolution per minute of target is 10, substrate temperature is 300°C and deposition time is 1.0h, as-deposited film from Si target and Cu substrate is obtained by pulsed laser deposition.The XRD pattern showed that as-deposited film is cubic stucture of Cu9Si, SEM images showed that as-deposited film has regular surface, particle size is about 300nm and particle size distribution is in narrow range.And the same time the electrochemical properties of as-deposited film showed good cycleability.