Method for preparing nanometer structures from top to bottom on surfaces of (110) type silicon chips

The invention relates to a method for preparing nanometer structures from top to bottom on the surfaces of (110) type silicon chips, which belongs to the technical field of nanometer and is characterized in that the anisotropy wet process corrosion characteristics of silicon materials are used for preparing monocrystalline silicon nanometer wall structures or nanometer corner structures with the characteristic dimension being nanometer level on the surfaces of the (110) silicon chips, or a self limitation oxidation process is combined for further preparing the monocrystalline silicon nanometer line structure with the cross section in a reverse triangular shape. The method has the advantages that the process is simple, only the conventional photoetching and the anisotropy wet process corrosion masking manufacture, corrosion and etching processes are adopted, the large-scale manufacture can be realized, and the method belongs to a convenient micro nanometer integrating process technology. The nanometer structure manufactured in the invention can be used for studying the structure properties of the low-dimension monocrystalline silicon materials, including the study of the mechanical property, the thermal property, the electric property and the like, can also be used as sensor function structure components and has the application prospects.