Incoherent-light pulse annealing of nanoporous germanium layers formed by ion implantation

Abstract The study addresses the monocrystalline c-Ge substrates implanted by Ag+ ions with the energy of 30 keV, irradiation dose of 7.5·1016 ion/cm2 at current density of 8 μA/cm2 and annealed by incoherent-light pulse. By scanning electron microscopy and optical reflection spectroscopy measurements it was shown that after ion implantation an amorphous porous Ag:PGe layer of a spongy structure with nanowires on the c-Ge substrate were formed. Pulsed light annealing of the implanted samples leads to partial melting and recrystallization of the surface Ag:PGe layer. The spongy annealed structure of the Ag:PGe layer was not destroyed, however the diameters of nanowires increased by about 1,5 times.