Design of the partial concentrator lens for III-V on Si static concentration

To compete with the flat-plate crystalline Silicon cell module, III-V on Si structure is developed. However, it is clear that the situation of the higher cost of III-V cell relative to the Silicon cell will be unchanged. Then, it is preferred concentrating III-V cell for further savings. The partial concentrator is expanding the acceptance angle despite the higher concentration ratio. It is achieved by better performance balance of on-axis and high incidence angle. The new and generalized design method of the partial concentrator was developed. The profile function was constructed by selected Zernike’s polynomial considering rotational symmetry. The full conditions of the calculation including the initial value and the radial and azimuthal degree of the function were examined. It was found that the recommended radial and azimuthal degree were 12 and 12.