Identification and properties of P b -like centers in photoluminescent porous silicon

Abstract A paramagnetic defect in luminescent porous Si was observed at concentration 10 15 cm -2 . The g-values, hyperfine and superhyperfine structure identify it as a slight variant of the planar-surface P b0 center (•Si≡Si 3 ). Its complete g-map reflects multiply-oriented microcrystal faces on a lattice aligned with the substrate. It seems not to be the only luminescence recombination center in porous Si.