Unannealed and annealed depth distributions of mercury implanted into silicon

We report unannealed and annealed depth distributions for Hg implanted into Si at energies of 300–900 keV and fluences from 1014 to 1016 cm−2. Range parameters and Pearson IV moments are determined; projected range and range straggle are about 40% greater than Lindhard, Scharff, and Schio/tt calculations. Significant redistribution of Hg atoms occurs with annealing, especially at 550 °C, and the nature of the redistribution varies with ion fluence, and appears to be related to amorphization and regrowth of the damaged layer.