Calculation of the energy levels in InAs/GaAs quantum dots

We present a detailed effective mass calculation of the energy levels in InAs quantum dots embedded in GaAs. We compare the results of a separable approximate treatment with a more complete numerical approach. A satisfying agreement is found with the available experimental data. Even for dot diameters of the order of 30 nm, we find large distances between consecutive energy levels, which should play an important role in the energy relaxation rates