Sims and photoluminescence evaluation of high purity InP grown by organometallic vapor phase epitaxy

Abstract This paper reports on the growth of high purity InP by organometallic vapor phase epitaxy at atmospheric pressure by the reaction of trimethylindium and phosphine. Electron mobilities as high as 104,000 cm/V·s and electron concentration as low as 4.8×10 14 cm -3 were achieved at an optimum growth temperature of 650°C. This is a high enough temperature for the growth of high quality aluminum containing compounds for InP based heterojunction devices. Electrical measurements, SIMS analysis and photoluminescence measurements are used to show that the optimum growth temperature results from donors and acceptors whose incorporation vary oppositely with temperature.