Исследование возможности получения структур с нанометровыми толщинами слоев и резкими границами раздела между ними с помощью процессов ионно-лучевого и реактивного ионно-лучевого осаждения

At present, atomic layer deposition and magnetron sputtering processes are used in the production of integrated circuits (IC) to obtain structures with nanometer layer thicknesses and sharp interfaces between them. However, there are processes of ion-beam and reactive ion-beam deposition, which are mainly used to produce multilayer optical coatings. The aim of this work is to study the possibility of obtaining structures with nanometer layer thicknesses and sharp interfaces between them in the processes of ion-beam and reactive ion-beam deposition are investigated. The studies were carried out by the methods of time-of-flight secondary ion mass spectrometry (SIMS) and spectral ellipsometry. On the example of the structure Ta (3 nm)/Nb (3 nm)/Ta (3 nm) it is shown that the process of ion-beam deposition allows to form structures with nanometer layer thicknesses and sharp boundaries between them. Whereas in the process of reactive ion-beam deposition of the structure Nb (3 nm)/Ta 2 O 5 (3 nm)/Nb (3 nm) oxidation occurs to the entire thickness of the metal layer following the metal oxide layer due to ions, atoms and molecules of oxygen contained in the ion beam.