A simple method for extraction of threshold voltage of FD SOI MOSFETs

Methods of a MOSFET threshold voltage extraction have been briefly described. A possibility of their application for characterization of a fully-depleted SOI MOSFETs has been discussed. A simple method for SOI MOSFET threshold voltage characterization has been proposed. The concept has been verified based on experimental data obtained for SOI MOSFETs manufactured in ITE.