Optimization of gettering processes of metallurgical-grade silicon for solar cell applications

Conversion efficiency of a solar energy in the electric is substantially determined not only by the total impurity concentration in solar cell element, but also by impurity chemical and physical state. Gettering processes, which are included in the technology of solar cell manufacturing, are usually used for such impurity redistribution. In order to optimize gettering processes we developed a program tool based on the fundamental physical and chemical laws. The description of physical and chemical behaviour of impurities in silicon is based both on known experimental data, and on calculations of necessary parameters by means of present-day thermodynamic and quantum-chemical methods. Developed tool helps to choose a gettering regime (a temperature profile, time, getter layer thickness) for optimization of these processes for the given initial chemical composition of the silicon wafer. Possibility of analysis of recombination activity of various types of defects in silicon on the basis of carrier lifetime criterion allows to obtain an estimation of efficiency of the gettering processes. Using this program tool we demonstrated that solar cell efficiency can be significantly increased by optimal choice of gettering conditions.