4 × 105 cm2 V−1 s−1 peak electron mobilities in GaAs grown by solid source MBE with As2

Abstract A detailed study into the molecular beam epitaxy of high purity n-GaAs with arsenic dimers has been undertaken, culminating in the growth of a layer with a peak mobility of ≈4.0 × 10 5 cm 2 V −1 s −1 at 28–40 K, the highest ever recorded in bulk GaAs.