p+-InAsSbP/n-InAs photodiodes for IR optoelectronic sensors
2005
The performance of p + -InAsSbP/ n -InAs infrared (IR) photodiodes prepared by liquid phase epitaxy technique
(LPE) is investigated. The current-voltage and capacitance-voltage characteristics, photoresponse and noise spectra are
investigated in the temperature range 77-300 K. The trap-assisted current is calculated and compared with
experimental data. It is found that at near-room temperatures and small reverse biases U ≤ 0.2 V experimental I - U
characteristics are determined by diffusion and generation-recombination mechanisms. The trap-assisted tunnelling is
shown to be dominant at higher reverse biases. The heterojunction photodiodes have superior photoresponse spectra in
comparison with homojunction photodiodes and high threshold parameters.
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