Laser annealing of the Si-Au interface

Abstract The laser annealing of the Si-Au interface was investigated by Auger and electron energy loss spectroscopies and scanning electron micrography. Two regimes were found. 1. (i)For low beam energy densities we observe diffusion of silicon atoms into the gold film. 2. (ii)For higher densities agglomeration of the metallic layer occurs. These results are similar to those obtained with conventional thermal annealings. An estimation of the diffusion coefficient of silicon gives a high value (approximately 10 -6 cm 2 s -1 ) which is thought to be characteristic of amorphous metallic alloys.