Polycrystalline silicon film deposited by ICP-CVD

Abstract We studied the deposition of polycrystalline silicon (poly-Si) using SiH 4 /SiH 2 Cl 2 /H 2 mixtures by inductively coupled plasma chemical vapor deposition. The deposition rate and crystalline quality were improved by increasing RF power. The poly-Si film deposited with the [SiH 2 Cl 2 ]/[SiH 4 ] ratio of 2 and the RF power of 1500 W exhibited the deposition rate of 4.2 A/s, the polycrystalline volume fraction of 88%, the Raman FWHM of 7 cm −1 , and the TEM grain size of ∼1200 A. The solar cell made of this material exhibited a conversion efficiency of 3.14%.