Total Ionizing Dose Effects of Deep Submicron nMOSFET Devices

We study the total ionizing dose sensitivity of 0.25μm nMOSFETs.The off-state leakage current,transconductance,and the gate leakage current of the devices are monitored.Experiment shows that the effect on irradiation is mostly caused by the space charges in the field oxide,which is verified by simulation.