Memory cell and process for their preparation

The invention provides a method for manufacturing a memory cell, a substrate (101), there is provided a grave shaped recess (102) in the substrate (101) is etched, a barrier layer (103) in the grave shaped recess (102) is non-conformally deposited is grain elements are grown on the inner surfaces of grave-shaped recess (102) (104), a dielectric layer (202) is deposited on the surfaces of the grain elements and the inner surfaces of grave-shaped recess, and a conductive layer is deposited on the dielectric layer, wherein the grain elements (104 ) selectively forming on the inner surfaces (105) of the grave shaped recess (102) in a lower area of ​​the grave shaped recess (102) electrode area (301) to grow, and (in an upper area of ​​the grave shaped recess forming 102) collar portion (302) of an amorphous silicon layer continues to grow.