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A 0.13 µm SiGe BiCMOS technology for mm-wave mixed-signal applications
A 0.13 µm SiGe BiCMOS technology for mm-wave mixed-signal applications
2009
Rucker
Heinemann
Mai
Tillack
Keywords:
Optoelectronics
Silicon-germanium
Mixed-signal integrated circuit
Logic gate
bicmos technology
Resistor
bicmos integrated circuits
CMOS
Materials science
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