Strain‐Modulated Charge Transport in Flexible PbS Nanocrystal Field‐Effect Transistors

Mechanical strain effect on lead sulfide (PbS) nanocrystal transistors is demonstrated. By applying compressive strain, the electron mobility is increased up to 45% while the mobility decreases in the opposite strain direction. The results are followed by the change of threshold voltages which originates from the bending of the ligands and the change of carrier traps when the strain is applied.