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New approach to form EOT-scalable gate stack with strontium germanide interlayer for high-k/Ge MISFETs
New approach to form EOT-scalable gate stack with strontium germanide interlayer for high-k/Ge MISFETs
2009
Kamata
Takashima
Kamimuta
Tezuka
Keywords:
Electron mobility
Annealing (metallurgy)
High-κ dielectric
Germanide
MISFET
Logic gate
Silicon
Materials science
Optoelectronics
Semiconductor device
Correction
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