Old Web
English
Sign In
Acemap
>
Paper
>
STT‐MRAMのための1Gb垂直磁気トンネル接合アレイにおける臨界デバイスパラメータの温度依存性【Powered by NICT】
STT‐MRAMのための1Gb垂直磁気トンネル接合アレイにおける臨界デバイスパラメータの温度依存性【Powered by NICT】
2017
Chando Park
Jimmy Kan
C. Ching
Jaesoo Ahn
Lin Xue
Rongjun Wang
A. Kontos
Shurong Liang
Mangesh A. Bangar
Hao Chen
Sajjad Hassan
S. Kim
Mahendra Pakala
Seung H. Kang
Keywords:
Nuclear magnetic resonance
Physics
Nuclear physics
Condensed matter physics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
1
Citations
NaN
KQI
[]