Flip chip structure of high-voltage LED chips

The utility model provides a flip chip structure of high-voltage LED chips. The structure comprises, from top to bottom: a substrate; n chips, each of which comprises, from top to bottom, N-GaN, a luminous layer and P-GaN; an N-type contact layer on the surface of the N-GaN and a P-type contact layer on the surface of the P-GaN; a first insulating layer; N-type contact holes penetrating the first insulating layer and interconnecting with the N-type contact layer, and P-type contact holes interconnecting with the P-type contact layer; a first wiring layer connected to the P-type contact holes in a first chip; a second wiring layer connected to the N-type contact layer of an ith chip and the P-type contact layer of an [i + 1]th chip; a third wiring layer connected to the N-type contact layer of an nth chip; a second insulating layer; a first wiring contact hole penetrating the second insulating layer and interconnecting with the first wiring layer, and a third wiring contact hole interconnecting with the third wiring layer; and an N soldering pad connected to the third wiring contact hole and a P soldering pad connected to the first wiring contact hole. Thanks to the structure, a flip chip is good in cooling effect, large in light emitting area and simple in technique, without blocking light.