Radiative transition with visible light in crystallized aGe:H/aSiNX:H multiquantum-well structures

Abstract Crystallized aGe:H/aSiN X :H multiquantum-well (MQW) structures were prepared by a computer controlled plasma enhanced chemical vapor deposition method and then crystallized by Ar + laser annealing technique. The layered structures and the crystallinity of the samples were determined by means of X-ray diffraction (XRD) spectroscopy. The crystallized samples showed a radiative transition with visible light as the Ge well layer thickness was less than 4 nm. This may preliminary be explained by the quantum confinement of electrons and holes.