Electrode material for a surface acoustic wave device

A surface acoustic wave device includes a quartz substrate having Euler angles (0{, r , 90{ O 5{) in which r is in a range of 119{ & r & 140{ and an IDT for exciting an SH wave is formed on the quartz substrate by use of an electrode material containing as a major component at least one of Ag, Mo, Cu, Ni, Cr, and Zn and having a density of at least about 7g/cm 3 . The film thickness of the IDT is such that the attenuation constant is approximately zero.