The ER in Accumulation and Inversion Layers of Non-parabolic Semiconductors

This chapter investigates the ER in accumulation and inversion layers of non-linear optical, III–V, II–VI, IV–VI, stressed semiconductors, Ge and GaSb in the weak electric field limit by formulating the new expression of surface electron statistics in each case. It has been observed that the ER increases with increasing surface electron field and decreasing alloy composition. In this simplified analysis, we have investigated the ER in the electric quantum limit and the Sect. 3.4 contains 12 open research problems, which is the integral part of this chapter.