Influence of the well composition and thickness in the GaInP/InP/GaInAs/InP structure for HEMT

Photoluminescence, Hall effect, and I-V characteristics of heterostructure InP/GaInAs/InP grown by gas source molecular beam epitaxy (MBE) are presented. The structure is chosen as an alternative to AlInAs/GaInAs/AlInAs to avoid the problems related to the presence of aluminum in HEMT structures. An extremely high indium concentration is used in the well to improve its performance. The InAs well degrades above 10 AA thickness. It is shown that the best experimental results are obtained with a 60 AA GaInAs well (82% InAs) with 2% lattice mismatch. >