Reliable High-Performance Amorphous InGaZnO Schottky Barrier Diodes With Silicon Dioxide Passivation Layer

Sputtered amorphous indium-gallium-zinc -oxide (a-IGZO) Schottky barrier diodes (SBDs) were comparatively investigated without and with a passivation layer (PL). The a-IGZO SBDs without PLs were found to be highly unstable in the atmosphere and under electrical stress. During the implementation of silicon dioxide (SiO2) PL, the associated thermal oxidization and hydrogen doping resulted in high-performance metrics, including an ideality factor close to the unity, a high Schottky barrier of 0.82 eV, and a large current rectification ratio of over 108. Benefited from the PL protection and ideal Schottky contact, the environmental and electrical stabilities of SBDs were significantly enhanced.