The phases and morphology of CuInSe2 films prepared by different electrical deposition technologies

ABSTRACTCuInSe2 as one I-III-VI ternary compound with direct band gap, has become one of the most promising photovoltaic materials due to high optical absorption coefficient and conversion efficiency. CuInSe2 films were prepared by electrodeposition with CuCl2·2H2O, InCl3, SeO2 as raw materials. The phases of product films were analyzed by X-ray diffraction (XRD) and the morphology was characterized by scanning electron microscope (SEM). Experimental results show that dense and continuous CuInSe2 films can be obtained under conditions of deposition potential -0.5 V, pH 2.5 and raw materials ratio 6: 8: 12: 50, and the XRD diffraction peaks of CuInSe2 film are corresponding to (111), (220) and (311) crystal planes respectively, it consists of many rods with about 1 μm length; While the CuInSe2 film obtained under conditions of deposition potential -0.5 V, pH 2.0, and CuCl2·2H2O, InCl3, SeO2 and C6H5Na3O7·2H2O with concentrations of 6 mmol/L, 8 mmol/L, 6 mmol/L, 5 mmol/L respectively, shows different XRD di...