Effects of bias and temperature on one-dimensional ballistic transport in a planar double-gate quantum wire transistor

Abstract The combined effects of bias and temperature on one-dimensional ballistic transport in a planar double-gate quantum wire transistor are investigated. A simple formula that quantitatively describes both effects is derived and found to fit experiments well. Other energy broadening factors are found to be significant. Furthermore, due to the strong confinement potential in the device, the current quantization is still observable at a temperature up to 26 K or with a drain bias up to 12 mV.