Ring Oscillators with Monolithically Integrated-Optical Readout Based on

Abstruct- Ring oscillators having integrated-optical readout are realized in GaAs-AIGaAs field-effect transistor self-electrooptic-effect-device (FET-SEED) technology-a monolithic integration technology for FET’s and normal-incidence multiplequantum-well modulators and detectors. Good agreement between simulated and measured de-inverter-transfer characteristics is shown. At one bias point, ring oscillator frequencies correspond to unity fan-in and fan-out delay values of 129.5 pdstage. The power-delay product at this bias point was 306 fJ. Measurements were made on circuits whose transistors had a transconductance of about 80 mS/mm. Simulations of inverter delay are discussed, including load capacitances, and are found to be in good agreement with experiment.