A new organoindium precursor for electronic materials

Abstract Among all the possible alternative precursors for growth of indium-containing material, the trimethylindium-trimethylamine adduct appears to be the most suitable. It is a simple addition compound between trimethylindium and trimethylamine, non-pyrophoric and relatively stable towards air and moisture. Its vapour pressure approaches that of trimethylindium. It was synthesized from indium metal, magnesium and methyl iodide as starting materials and then displacement of the solvated-trimethylindium intermediate formed, by the gaseous trimethylamine. Indium phosphide layers were grown with phosphine and the trimethylindium-trimethylamine adduct purified by zone refining.