Sol–gel synthesis and electrical characterization of Bi3.25La0.75Ti3O12 thin films

Abstract Lanthanum bismuth titanate (Bi 3.25 La 0.75 Ti 3 O 12 ) (BLT) thin films on Pt/TiO 2 /SiO 2 /Si substrates were prepared by sol–gel using ethylacetoacetate (EAA) as a replacement for the highly toxic 2-methoxyethanol. EAA is used as a modifier to stabilize the metal alkoxide. At 450 °C films are amorphous. After annealing at 650 °C films are crystalline and present good dielectric and ferroelectric properties. A 0.4 μm thick BLT film exhibits 2 P r of ∼21 μC/cm 2 and 2 E c of ∼195 kV/cm at 300 kV/cm. The dielectric constant and dielectric losses of these BLT films at 1 kHz are 140 and 0.025, respectively.