Effect of shallow donors induced by hydrogen on P+N junctions

Abstract We have evaluated the effect of shallow donors induced by proton irradiation on P + N junctions. We have combined the capacitance–voltage (C–V) technique, which provides the shallow donor profile, and a numerical simulation, based on the solution of Poisson’s equation, to determine the electric field as a function of depth in the N region. This procedure can be applied to study the breakdown voltage of P + N junctions as a function of proton irradiation, i.e. its energy and dose.