Transverse magnetoresistance of metal interfaces with Hg1−xCdxTe

A magnetic field perpendicular to a two-terminal semiconductor will increase the sheet resistance under the contact as well as that of the noncontact region. A method using magnetoresistance is presented in this article to study the carrier’s behavior at the metal–Hg1−xCdxTe interface, in which we consider the disruption of the interface by the deposition of metal. Experimental results show that an inversion layer exists between p-Hg0.783Co0.217Te and the deposited Sn/Au.