Simulation of the HPM power and pulse width on the influence of ESD protection device

The effect of GGMOS type electrostatic discharge (ESD) protection device under high power microwave (HPM) is studied by numerical simulation based on semiconductor drift-diffusion model. With using the hybrid simulation of device and circuit, the transient process of the electromagnetic damage effect of the device in HPM is studied. Based on this, some important sensitive parameters like power and pulse width on the device damage effect and the mechanism are analyzed. The results show that the temperature increases with the increasing power at a definite duty ratio. With the same power, the larger the duty ratio is, the shorter the time required to reach the temperature of damage. In spite of the lack of experimental verification, the simulation calculation results are supported by the theoretical calculation and the calculation results of this paper provide theoretical reference for the design of electronic devices.