Low-Power Switching in Phase-Change Memory using New Superlattice : SnTe/Sb 2 Te 3 System

A new material SnTe for a superlattice (SL) phase-change device is proposed as the substitute of GeTe. XRD results showed that a SnTe(111)/Sb2Te3(001) SL formed, though SnSbTe-alloy peaks were greatly dominant. The switching power of this device was approximately 1/10th－1/15th that of a Ge2Sb2Te5 device, and, almost equivalent to or lower than that of a GeTe/Sb2Te3 SL device. The endurance was confirmed to be higher than 10 5 cycles. For the mechanism of the low switching power, Sn switching might work. This is, however, still a supposition.