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Monoenergetic Positron Beam Study of Heavily Si-Doped GaAs Grown by MOCVD Using Tertiarybutylarsine
Monoenergetic Positron Beam Study of Heavily Si-Doped GaAs Grown by MOCVD Using Tertiarybutylarsine
1993
Shigefusa Chichibu
A. Iwai
Yuko Nakahara
S Matsumoto
Hiroyuki Higuchi
Long Wei
Shoichiro Tanigawa
Keywords:
Metalorganic vapour phase epitaxy
Doping
Metallurgy
Materials science
Beam (structure)
Analytical chemistry
Positron
Optoelectronics
si doped
Composite material
positron beam
Correction
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