B11-P-03Interactions of TEM electron beam with liquid and nanoparticles in the liquid

Sensitivity of compositional analysis with energy dispersive X-ray spectrometer (EDS) has been improved, since a large solid angle Si drift detector (SDD) and a system with multiple detectors were realized [1,2]. Up to now, transmission electron microscopy (TEM)-EDS has been mostly untouched in the analysis of semiconductor dopants, because of their low concentration. There has been a strong desire to see “limit of detection (LOD)”, using a multiple SDD analysis system. In this study, we explore a concentration at LOD for a dopant in Si device using an FETEM (JEM-2800, JEOL) with two SDDs, whose sensing area is 100 mm each. We examined an As-doped Si wafer as a sample. The concentration profile along z direction has been verified by secondary ion mass spectrometry (SIMS). We made a cross sectional sample for TEM observation. We define an dopant concentration (Cdopant ) at LOD as