Interfacial hardness enhancement in deuterium annealed 0.25 μm channel metal oxide semiconductor transistors

Interfacial degradation induced by hot-electron injection has been studied in n-channel metal oxide semiconductor transistors with channel lengths down to 0.2 μm. The devices were annealed in either H2 or D2 containing atmospheres. The channel transconductance and threshold voltage variations induced by hot-electron injection into the gate are consistent with interface state generation. Charge pumping experiments confirm this conclusion. The lifetime for a 10% reduction in the transconductance is enhanced by ∼10 times for devices annealed in D2 containing atmospheres as compared to those annealed in H2.