Industrial Process Leading to 19.8% on N-Type Cz Silicon☆

Abstract High efficiencies have been demonstrated on n-type solar cells thanks to advanced passivation layers and metallisation techniques. In this paper we present the latest results obtained with our bifacial cell structure, using BCl3 diffusion for emitter formation, thermal SiO2 passivation and screen-printing metallisation. By continuously improving front side contact quality and reducing substrate bulk lifetime degradation we were able to steadily increase the efficiency of our solar cells from 18.8% to 19.8% on large area c-Si wafers. A first PV module of 21 cells exhibiting an output power of 92 Wp was fabricated.