Optical and thermal sensitivity of pH-ISFET with Ta2O5 membrane

Abstract The effects of light and temperature upon a PH-ISFET with a Ta 2 O 5 membrane have been investigated. It is shown that long-term drain-current relaxation in the ISFET after switching the light on and off is related to the charge generation-neutralization processes in the Ta 2 O 5 layer. The thermal coefficient of the ISFET is determined and its dependence on the channel width to length ratio has been established and compared with conventional MOSFET theory.